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TMS418160ADZ 데이터시트(PDF) 17 Page - Texas Instruments |
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TMS418160ADZ 데이터시트(HTML) 17 Page - Texas Instruments |
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17 / 24 page ![]() TMS418160A 1048576 BY 16-BIT DYNAMIC RANDOM-ACCESS MEMORY SMKS891C – AUGUST 1996 – REVISED OCTOBER 1997 17 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 PARAMETER MEASUREMENT INFORMATION RAS UCAS LCAS Address W DQ8 – DQ15 DQ0 – DQ7 OE tRASP tRP tRSH tCRP tPC tCSH tRCD tCAS tCP tCAL tRAL tCAH tASR tRAH tRAD tCWL tCWL tRWL tDH tDS Don’t Care Don’t Care Don’t Care Don’t Care Don’t Care Column Column Valid In Valid In Valid In Row tCLCH tASC tWCH tRHCP (see Note A) Don’t Care Don’t Care tWCS (see Note D) (see Note D) (see Note E) (see Note E) (see Note F) tCAS NOTES: A. To hold the address latched by the first xCAS going low, the parameter tCLCH must be met. B. A read cycle or read-modify-write cycle can be mixed with the write cycles as long as the read- and read-modify-write timing specifications are not violated. C. xCAS order is arbitrary. D. tWCS and tWCH must be satisfied for each xCAS. E. tDS and tDH for a DQ is referenced to the corresponding xCAS. F. tCWL must be satisfied for each xCAS. Figure 9. Enhanced-Page-Mode Early Write-Cycle Timing |
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