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ASM3P2180AF-08ST 데이터시트(PDF) 3 Page - PulseCore Semiconductor |
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ASM3P2180AF-08ST 데이터시트(HTML) 3 Page - PulseCore Semiconductor |
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3 / 8 page ![]() Peak Reducing EMI Solution 3 of 8 February 2008 ASM3P2180A rev 1.2 Notice: The information in this document is subject to change without notice. Absolute Maximum Ratings Symbol Parameter Rating Unit VDD, VIN Voltage on any pin with respect to Ground -0.5 to +4.6 V TSTG Storage temperature -65 to +125 °C Ts Max. Soldering Temperature (10 sec) 260 °C TJ Junction Temperature 150 °C TDV Static Discharge Voltage (As per JEDEC STD22- A114-B) 2 KV Note: These are stress ratings only and are not implied for functional use. Exposure to absolute maximum ratings for prolonged periods of time may affect device reliability. DC Electrical Characteristics Symbol Parameter Min Typ Max Unit VIL Input low voltage GND – 0.3 0.8 V VIH Input high voltage 2.0 VDD + 0.3 V IIL Input low current (pull-up resistors on inputs SS%, FS) -27 µA IIH Input high current 18 µA IXOL XOUT output low current (@ 0.4V, VDD = 3.3V) 3 mA IXOH XOUT output high current (@2.5V, VDD = 3.3V) 4 mA VOL Output low voltage (VDD = 3.3V, IOL = 4mA) 0.4 V VOH Output high voltage (VDD = 3.3V, IOH = 4mA) 2.5 V ICC Dynamic supply current normal mode (3.3V and 10pF loading) 10 15 25 mA IDD * Static supply current standby mode 7 mA VDD Operating voltage 2.8 3.3 3.7 V tON Power up time (first locked clock cycle after power up) 0.18 mS ZOUT Clock output impedance 50 Ω *CLKIN pin pulled to GND |
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