ZXGD3102T8 datasheet(3/15 Pages) DIODES

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Issue 3, January 2009

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©Diodes Incorporated 2008

ZXGD3102T8

DC Electrical characteristics at TA = 25°C;

VCC = 10V; RBIAS = 3.3kΩ ; RREF=3.9kΩ

Parameter

Symbol

Conditions

Min.

Typ

Max.

Unit

Input and supply characteristics

Operating current

IOP

VDRAIN ≤ -100m V

2.4

VDRAIN ≥ 0V

5.2

Gate Driver

Turn-off Threshold Voltage(**)

VG = 1V, (*)

-50

-24

GATE output voltage (**)

VG(off)

VDRAIN ≥ 0V, (*)

0.58

VDRAIN = -60mV, ( )

4.1

VDRAIN = -80mV, ( )

6.5

8.5

VDRAIN = -100mV, ( )

8.0

VDRAIN = -140mV, ( )

8.5

9.4

GATEH peak source current

ISOURCE

VGH = 1V

GATEL peak sink current

ISINK

VGL = 5V

DC Electrical Characteristics at TA = 25°C;

VCC = 10V; RBIAS = 3.9kΩ ; RREF=3.9kΩ

Parameter

Symbol

Conditions

Min.

Typ

Max.

Unit

Input and supply characteristics

Operating current

IOP

VDRAIN ≤ -100m V

2.4

VDRAIN ≥ 0V

4.8

Gate Driver

Turn-off Threshold Voltage(**)

VG = 1V, (*)

-55

-29

GATE output voltage (**)

VG(off)

VDRAIN ≥ 0V, (*)

0.57

VDRAIN = -60mV, ( )

3.5

6.5

VDRAIN = -80mV, ( )

6.5

8.5

VDRAIN = -100mV, ( )

8.0

8.8

VDRAIN = -140mV, ( )

8.5

9.4

GATEH peak source current

ISOURCE

VGH = 1V

GATEL peak sink current

ISINK

VGL = 5V

Notes:

(**)

GATEH connected to GATEL

(*)

RH = 100kΩ, RL = O/C

( )

RL = 100kΩ, RH = O/C

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