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LE24LB642CS 데이터시트(PDF) 3 Page - Sanyo Semicon Device

부품명 LE24LB642CS
상세설명  Two Wire Serial Interface EEPROM
PDF  11 Pages
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제조업체  SANYO [Sanyo Semicon Device]
홈페이지  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

LE24LB642CS 데이터시트(HTML) 3 Page - Sanyo Semicon Device

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LE24LB642CS
DC Electrical Characteristics
VDD=1.7V to 3.6V
Parameter
Symbol
Conditions
min
typ
max
unit
Supply current at reading
ICC1
f=400kHz
0.5
mA
Supply current at writing
ICC2
f=400kHz
3
mA
Standby current
ISB
VIN=VDD or GND
2
μA
Input leakage current
ILI
VIN=GND to VDD
-2.0
+2.0
μA
Output leakage current (SDA)
ILO
VOUT=GND to VDD
-2.0
+2.0
μA
Input low voltage
VIL
VDD*0.2
V
Input low voltage (CMOS)
VILC
0.2
V
Input high voltage
VIH
VDD*0.8
V
Input high voltage (CMOS)
VIHC
VDD-0.2
V
IOL=0.7mA, VDD=1.7V
0.2
V
Output low voltage
VOL
IOL=2.0mA, VDD=2.5V
0.4
V
Capacitance/Ta=25
°C, f=1MHz
Parameter
Symbol
Conditions
max
unit
In/Output pin capacitance
CI/O
VI/O=0V (SDA)
10
pF
Input pin capacitance
CI
VIN=0V (other than SDA)
10
pF
Note: This parameter is sampled and not 100% tested.
AC Electric Characteristics
R=3.0k
Ω
SDA
VDD
C=50pF
Input pulse level
0.1
×VDD to 0.9×VDD
Input pulse rise / fall time
20ns
Output detection voltage
0.5
×VDD
Output load
50pF+Pull up resistor 3.0k
Ω
Output Load Circuit
VDD=1.7V to 3.6V
Parameter
Symbol
min
typ
max
unit
Slave mode SCL clock frequency
fSCLS
0
400
kHz
SCL clock low time
tLOW
1200
ns
SCL clock high time
tHIGH
600
ns
SDA output delay time
tAA
100
900
ns
SDA data output hold time
tDH
100
ns
Start condition setup time
tSU.STA
600
ns
Start condition hold time
tHD.STA
600
ns
Data in setup time
tSU.DAT
100
ns
Data in hold time
tHD.DAT
0
ns
Stop condition setup time
tSU.STO
600
ns
SCL SDA rise time
tR
300
ns
SCL SDA fall time
tF
300
ns
Bus release time
tBUF
1200
ns
Noise suppression time
tSP
100
ns
Write cycle time
tWC
10
ms
No.A1464-3/11



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