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STFW3N150 데이터시트(PDF) 5 Page - STMicroelectronics

부품명 STFW3N150
상세설명  N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH??Power MOSFET
PDF  16 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STFW3N150 데이터시트(HTML) 5 Page - STMicroelectronics

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STFV3N150, STFW3N150, STP3N150, STW3N150
Electrical characteristics
5/16
Table 7.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 750 V, ID = 1.25 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18)
24
47
45
61
ns
ns
ns
ns
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
2.5
10
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 2.5 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 2.5 A, di/dt = 100 A/µs
VDD= 60 V
(see Figure 20)
410
2.4
11.7
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 2.5 A, di/dt = 100 A/µs
VDD= 60 V, Tj = 150 °C
(see Figure 20)
540
3.3
12.3
ns
µC
A



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