APT50GP60LDL(G)

TYPICAL PERFORMANCE CURVES

MAXIMUM RATINGS

All Ratings: T

C

= 25°C unless otherwise specified.

STATIC ELECTRICAL CHARACTERISTICS

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (V

GE

= 0V, I

C

= 1.0mA)

Gate Threshold Voltage

(V

CE

= V

GE

, I

C

= 1mA, T

j

= 25°C)

Collector-Emitter On Voltage (V

GE

= 15V, I

C

= 50A, T

j

= 25°C)

Collector-Emitter On Voltage (V

GE

= 15V, I

C

= 50A, T

j

= 125°C)

Collector Cut-off Current (V

CE

= 600V, V

GE

= 0V, T

j

= 25°C)

2

Collector Cut-off Current (V

CE

= 600V, V

GE

= 0V, T

j

= 125°C)

2

Gate-Emitter Leakage Current (V

GE

= ±20V)

Symbol

V

(BR)CES

V

GE(TH)

V

CE(ON)

I

CES

I

GES

Units

Volts

µA

nA

Symbol

V

CES

V

GE

I

C1

I

C2

I

CM

SSOA

P

D

T

J

,T

STG

T

L

Ratings

600

±30

150

72

190

190A @ 600V

625

-55 to 150

300

UNIT

Volts

Amps

Watts

°C

Parameter

Collector-Emitter Voltage

Gate-Emitter Voltage

Continuous Collector Current

C

= 25°C

Continuous Collector Current @ T

C

= 110°C

Pulsed Collector Current

1

Switching Safe Operating Area @ T

J

= 150°C

Total Power Dissipation

Operating and Storage Junction Temperature Range

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

MIN

TYP

MAX

600

3

4.5

6

2.2

2.7

2.1

525

2750

±100

voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high

frequency, high voltage switching applications and has been optimized for high frequency

switchmode power supplies.

APT50GP60LDL(G)

C

E

G

Features

• Low Conduction Loss

• Low Gate Charge

• Ultrafast Tail Current shutoff

• Low forward Diode Voltage (V

• Ultrasoft Recovery Diode

• SSOA Rated

• RoHS Compliant

Typical Applications

• Induction Heating

• Welding

• Medical

• High Power Telecom

• Resonant Mode Phase Shifted

Bridge

Microsemi Website - http://www.microsemi.com

G

C

E