Absolute Maximum Ratings

Symbol

Parameter

Ratings

Unit

V

ces

Collector Emitter Voltage

600

V

I

C1

Continuous Collector Current @ T

112

A

I

C2

Continuous Collector Current @ T

60

I

CM

178

V

GE

±30

V

P

D

Total Power Dissipation @ T

356

W

SSOA

Switching Safe Operating Area @ T

178A @ 600V

T

Operating and Storage Junction Temperature Range

-55 to 150

°C

Combi (IGBT and Diode)

TYPICAL APPLICATIONS

• ZVS phase shifted and other full bridge

• Half bridge

• High power PFC boost

• Welding

• UPS, solar, and other inverters

• High frequency, high efficiency industrial

FEATURES

• Fast switching with low EMI

• Very Low E

off

for maximum efficiency

• Ultra low C

res

for improved noise immunity

• Low conduction loss

• Low gate charge

• Increased intrinsic gate resistance for low EMI

• RoHS compliant

APT60GA60JD60

600V

APT60GA60JD60

through leading technology silicon design and lifetime control processes. A reduced E

V

gate charge and a greatly reduced ratio of C

delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the

poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even

when switching at high frequency.

Microsemi Website - http://www.microsemi.com

High Speed PT IGBT

Static Characteristics

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

V

BR(CES)

Collector-Emitter Breakdown Voltage

V

600

V

V

CE(on)

Collector-Emitter On Voltage

V

I

T

2.0

2.5

T

1.9

V

GE(th)

Gate Emitter Threshold Voltage

V

3

4.5

6

I

CES

Zero Gate Voltage Collector Current

V

V

T

275

μA

T

3000

I

GES

Gate-Emitter Leakage Current

V

±100

nA

SO

T-2

27

file # E145592

"UL Recognized"

G

E

E

C