P r o d u c t I n n o v a t i o n F r o m

SA09

2

SA09U

.CHARACTERISTICSANDSPECIFICATIONS

ABSOLUTEMAxIMUMRATINGS

Parameter

Symbol

Min

Max

Units

SUPPLY VOLTAGE, +Vs to GND, 10mS surge

60

V

SUPPLY VOLTAGE, +V

16

V

OUTPUT CURRENT, peak

7.5

A

POWER DISSIPATION, internal

(Note 3)

80

W

TEMPERATURE, pin solder, 10s

300

°C

TEMPERATURE, junction

(Note 1)

150

°C

TEMPERATURE, storage

−65

150

°C

OPERATING TEMPERATURE RANGE, case

−55

125

°C

INPUTS

−0.4

+5.4

V

The SA09 is constructed from MOSFET transistors. ESD handling procedures must be observed.

The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not

crush, machine, or subject to temperatures in excess of 850°C to avoid generating toxic fumes.

CAUTION

ExTERNALCONNECTIONS

8-pinDIP

PACKAGESTYLEEL

Case tied to Pin 7. Allow no current in case. Bypassing of sup-

plies is required. If +PWM > RAMP then A OUT > B OUT.