1

Motorola Bipolar Power Transistor Device Data

Full Pak

High Voltage NPN Power Transistor

For Isolated Package Applications

The BUT11AF was designed for use in line operated switching power supplies in a

wide range of end use applications. This device combines the latest state of the art

bipolar fabrication techniques to provide excellent switching, high voltage capability

and low saturation voltage.

• 1000 Volt VCES Rating

• Low Base Drive Requirements

• Isolated Overmold Package

• Improved System Efficiency

• No Isolating Washers Required

• Reduced System Cost

• High Isolation Voltage Capability (4500 VRMS)

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Sustaining Voltage

VCEO(sus)

450

Vdc

Collector–Emitter Breakdown Voltage

VCES

1000

Vdc

Emitter–Base Voltage

VEBO

9.0

Vdc

RMS Isolation Voltage (For 1 sec,

Per Figure 7

VISOL1

4500

TA = 25°C, Rel. Humidity < 30%)

Per Figure 8

VISOL2

3500

V

Per Figure 9

VISOL3

2500

Collector Current — Continuous

IC

ICM

5.0

10

Adc

Base Current — Continuous

IB

IBM

2.0

4.0

Adc

Total Power Dissipation @ TC = 25°C*

Derated above 25

°C

PD

40

0.32

Watts

W/

°C

Operating and Storage Temperature Range

TJ, Tstg

– 65 to +150

°C

THERMAL CHARACTERISTICS

Thermal Resistance — Junction to Case*

R

θJC

3.125

°C/W

Maximum Lead Temperature for soldering purposes

1/8

″ from case for 5 sec.

TL

260

°C

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle

≤ 10%.

* Measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in a location beneath the die),

the device mounted on a heatsink, thermal grease applied, and a mounting torque of 6 to 8 in . lbs.

Full Pak is a registered trademark of Motorola Inc.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by BUT11AF/D

BUT11AF

POWER TRANSISTOR

5.0 AMPERES

450 VOLTS

40 WATTS

CASE 221D–02

TO–220 TYPE

REV 2