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AS8F2M32 데이터시트(PDF) 2 Page - Austin Semiconductor |
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AS8F2M32 데이터시트(HTML) 2 Page - Austin Semiconductor |
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2 / 12 page ![]() AUSTIN SEMICONDUCTOR, INC. FLASH FLASH FLASH FLASH FLASH AS8F2M32 AS8F2M32 Rev. 2.5 05/09 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 2 Austin Semiconductor, Inc. GENERAL DESCRIPTION (cont.) The Sector Erase Architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. Hardware Data Protection measures include a low VCC detector that automatically inhibits write operations during power transitions. The Hardware Sector Protection feature disables both program and erase operations in any combinations of the sectors of memory. This can be achieved via programming equipment. The Erase Suspend feature enables the user to put erase on hold for any period of time to read data form, or program data to, any sector that is not selected for erasure. True background erase can thus be achieved. The Hardware RESET\ pin terminates any operation in progress and resets the internal state machine to reading array data. The RESET\ pin may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the system microprocessor to read the boot-up firmware from the FLASH memory. The system can place the device into the standby mode. Power consumption is greatly reduced in this mode. FIGURE 2: FUNCTIONAL BLOCK DIAGRAM PIN DESCRIPTION PIN DESCRIPTION I/O0-31 Data Inputs/Outputs A0-20 Address Inputs WE\1-4 Write Enables CS\1-4 Chip Selects OE\ Output Enable VCC Power Supply GND Ground RESET\ Reset WE1\, CS1\WE2\, CS2\WE3\, CS3\WE4\, CS4\ RESET\ OE\ A0 - A20 2M x 8 2M x 8 2M x 8 2M x 8 8 8 8 8 I/O0-7 I/O8-15 I/O16-23 I/O24-31 |
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