BUV20

3

Motorola Bipolar Power Transistor Device Data

Figure 2. Active Region Safe Operating Area

100

1

VCE, COLLECTOR–EMITTER VOLTAGE (V)

10

125

50

10

1

100

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 2 is based on TC = 25_C. TJ(pk) is

variable depending on power level. Second breakdown

limitations do not derate the same as thermal limitations.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the limita-

tions imposed by second breakdown.

104

µF

Figure 3. “On” Voltages

Figure 4. DC Current Gain

100

100

IC, COLLECTOR CURRENT (A)

1

10

80

0

60

40

20

VCE = 4 V

Figure 5. Resistive Switching Performance

3.0

0

10

20

30

50

VCC = 30 V

IC/IB1 = 10

IB1 = IB2

2.0

1.0

tS

0.4

0.3

0.2

40

ton

tF

2.0

IC, COLLECTOR CURRENT (A)

1

10

1.6

IC/IB = 10

0.8

1.2

0.4

Figure 6. Switching Times Test Circuit

IC, COLLECTOR CURRENT (A)

VBE(sat)

VCE(sat)

VCC

IB2

IB1

RC

RC — Non inductive resistance

VCC = 30 V

RC = 0.6 Ω

0