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BUV21 데이터시트(PDF) 1 Page - Motorola, Inc |
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BUV21 데이터시트(HTML) 1 Page - Motorola, Inc |
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1 / 4 page ![]() 1 Motorola Bipolar Power Transistor Device Data SWITCHMODE Series NPN Silicon Power Transistor . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min. = 20 at IC = 12 A • Low VCE(sat), VCE(sat) max. = 0.6 V at IC = 8 A Very fast switching times: TF max. = 0.4 µs at IC = 25 A MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO(sus) 200 Vdc Collector–Base Voltage VCBO 250 Vdc Emitter–Base Voltage VEBO 7 Vdc Collector–Emitter Voltage (VBE = –1.5 V) VCEX 250 Vdc Collector–Emitter Voltage (RBE = 100 Ω) VCER 240 Vdc Collector–Current — Continuous — Peak (pw v 10 ms) IC ICM 40 50 Adc Apk Base–Current continuous IB 8 Adc Total Power Dissipation @ TC = 25_C PD 150 Watts Operating and Storage Junction Temperature Range TJ, Tstg – 65 to 200 _C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case θJC 0.7 _C/W Figure 1. Power Derating 1.0 0 TC, TEMPERATURE (°C) 40 80 160 200 0.4 0.8 0.6 0.2 120 SWITCHMODE is a trademark of Motorola, Inc. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUV21/D © Motorola, Inc. 1995 BUV21 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS CASE 197A–05 TO–204AE (TO–3) REV 7 |
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