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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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2SC1815L 데이터시트(PDF) 1 Page - Toshiba Semiconductor |
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2SC1815L 데이터시트(HTML) 1 Page - Toshiba Semiconductor |
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1 / 3 page  2SC1815(L) 2003-03-27 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815(L) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications · High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) · Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) · Low noise: NF = 0.2dB (typ.) (f = 1 kHz). · Complementary to 2SA1015 (L). (O, Y, GR class). Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 150 mA Base current IB 50 mA Collector power dissipation PC 400 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C Electrical Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 60 V, IE = 0 ¾ ¾ 0.1 mA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ¾ ¾ 0.1 mA hFE (1) (Note) VCE = 6 V, IC = 2 mA 70 ¾ 700 DC current gain hFE (2) VCE = 6 V, IC = 150 mA 25 100 ¾ Collector-emitter VCE (sat) IC = 100 mA, IB = 10 mA ¾ 0.1 0.25 Saturation voltage Base-emitter VBE (sat) IC = 100 mA, IB = 10 mA ¾ ¾ 1.0 V Transition frequency fT VCE = 10 V, IC = 1 mA 80 ¾ ¾ MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ¾ 2.0 3.5 pF Base intrinsic resistance rbb’ VCE = 10 V, IE = -1 mA, f = 30 MHz ¾ 50 ¾ W NF (1) VCE = 6 V, IC = 0.1 mA RG = 10 kW, f = 100 Hz ¾ 0.5 6 Noise figure NF (2) VCE = 6 V, IC = 0.1 mA RG = 10 kW, f = 1 kHz ¾ 0.2 3 dB Note: hFE (1) classification O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700 Unit: mm JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) |
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