• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

1

SPDT AlGaAs PIN Diode Switch

RoHS Compliant

Rev. V4

MA4AGSW2

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

FEATURES

anode technology.

DESCRIPTION

M/A-COM’s MA4AGSW2 is an Aluminum-Gallium-

Arsenide, single pole, double throw (SPDT), PIN diode

switch. The switch features enhanced AlGaAs anodes

which are formed using M/A-COM’s patented hetero-

junction technology. AlGaAs technology produces a

switch with less loss than a device fabricated using

conventional GaAs processes. As much as a 0.3 dB

reduction in insertion loss can be realized at 50 GHz.

This device is fabricated on an OMCVD epitaxial wafer

using a process designed for high device uniformity

and extremely low parasitics. The diodes within the

chip exhibit low series resistance, low capacitance,

and fast switching speed. They are fully passivated

with silicon nitride and have an additional polymer

layer for scratch protection. The protective coating

diode junction and the chip anode air-bridges. Off chip

bias circuitry is required.

APPLICATIONS

The high electron mobility of AlGaAs and the low

capacitance of the PIN diodes used makes this switch

ideal for fast response, high frequency, multi-throw

switch designs. AlGaAs PIN diode switches are an

ideal choice for switching arrays in radar systems,

radiometers, test equipment and other multi-assembly

components.

Yellow areas indicate bond pads

Parameter

Maximum Rating

Operating Temperature

-55°C to +125°C

Storage Temperature

-55°C to +150°C

Incident C.W. RF Power

+23dBm C.W.

Breakdown Voltage

25V

Bias Current

± 25mA

Assembly Temperature

+300°C < 10 sec

Junction Temperature

+175°C

Maximum combined operating conditions for RF Power, D.C.

bias, and temperature: +23 dBm C.W. @ 10 mA (per diode) @

+85°C.