MA4L

Series

3

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

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Silicon PIN Limiter Diodes

V13

Typical High Signal Peak Power Performance for the Single Shunt Limiter Diode

in a 50 Ω Test Fixture

High Signal Performance

: Measured using a single shunt diode (die) attached directly to the gold plated RF

housing ground with 2 mil thick conductive silver epoxy in a 50Ω, SMA, connectorized test fixture. Chip anode

contact is thermo-compression wire bonded using a 1 mil. dia. gold wire onto a 7.2 mil thick Rogers 5880 Duroid

microstrip trace. A shunt coil provides the D.C. return. Test frequency = 9.4 GHz,

For peak power

measurements RF pulse width = 1.0 µS, 0.001% duty cycle.

Typical Peak Power Performance for Single Shunt Limiter Diode in 50 Ohm System

at 9.4 GHz, 1uS Pulse Width, 0.001 Duty

0

5

10

15

20

25

30

35

40

45

0

1020

3040

50

Pin ( dBm )

MA4L011-134, MA4L021-134,

MA4L022-134

MA4L031-134, MA4L032-134

MA4L101-134

MA4L401-132

MA4L301-134

20 dB Loss

Line

10 dB Loss

Line

30 dB Loss

Line

0 dB Loss

Line