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Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

2

Wide Band GaAs MMIC Amplifier

0.2 - 3.0 GHz

Rev. V4

MAAM02350

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Ω

Parameter

Test Conditions

Units

Min.

Typ.

Max.

Gain

dB

17

19

—

Gain Flatness

dB

—

± 0.5

—

Noise Figure

0.2 - 3.0 GHz

dB

—

3.7

4.1

Input VSWR

Ratio

—

1.8:1

—

Output VSWR

Ratio

—

1.5:1

—

Output 1 dB Compression

0.2 - 3.0 GHz

dBm

—

+14

—

Reverse Isolation

dB

—

35

—

Bias Current

—

mA

—

65

100

OIP3

dBm

—

24

—

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

Gallium Arsenide Integrated Circuits are sensitive

to electrostatic discharge (ESD) and can be

damaged by static electricity. Proper ESD control

techniques should be used when handling these

devices.

Schematic

Typical Bias Configuration

6. Self-bias operation is obtained by connecting +6 volts to both

GND1 and GND2 to separate bypass 500 pF MOS

capacitors.