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STP4953 데이터시트(PDF) 3 Page - Stanson Technology

부품명 STP4953
상세설명  Dual P Channel Enhancement Mode MOSFET
PDF  8 Pages
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제조업체  STANSON [Stanson Technology]
홈페이지  http://www.stansontech.com
Logo STANSON - Stanson Technology

STP4953 데이터시트(HTML) 3 Page - Stanson Technology

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STP4953
STP4953
STP4953
STP4953
Dual P Channel Enhancement Mode MOSFET
-
5.2A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4953 2007. V1
ELECTRICAL
ELECTRICAL
ELECTRICAL
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Condition
Condition
Condition
Condition
Min
Min
Min
Min Typ
Typ
Typ
Typ Max
Max
Max
Max Unit
Unit
Unit
Unit
Static
Static
Static
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS=0V,ID=-250uA
-30
V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250 uA
-1.0
-3.0
V
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
±100
nA
Zero Gate Voltage Drain
Current
IDSS
TJ=55℃
VDS=-30V,VGS=0V
-1
uA
VDS=-30V,VGS=0V
-5
On-State Drain Current
ID(on)
VDS=-5V,VGS=10V
-25
0
A
Drain-source On-Resistance
RDS(on)
VGS=-10V, ID=-5.2A
VGS=-6.0V, ID=-4.5A
VGS=-4.5V,ID=-4.0A
0.050
0.060
0.075
0.060
0.080
0.090
Ω
Forward Tran Conductance
gfs
VDS=-10V,ID=-5.0A
9.0
S
Diode Forward Voltage
VSD
IS=-2.0A,VGS=0V
-0.8 -1.2
V
Dynamic
Dynamic
Dynamic
Dynamic
Total Gate Charge
Qg
VDS=-15V,VGS=-10V
ID≡-5.0A
15
10
nC
Gate-Source Charge
Qgs
4.0
Gate-Drain Charge
Qgd
2.0
Input Capacitance
Ciss
VDS =-15V,VGS=0V
f=1MHz
680
pF
Output Capacitance
Coss
120
Reverse TransferCapacitance
Crss
75
Turn-On Time
td(on)
tr
VDD=15V,RL=15Ω
ID=-1.0A,VGEN=-10V
RG=6Ω
7.0
15
nS
10
20
Turn-Off Time
td(off)
tf
40
80
20
40



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