ST7263BEx datasheet(148/186 Pages) STMICROELECTRONICS

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Electrical characteristics

ST7263Bxx

148/186

Doc ID 7516 Rev 8

13.7.2

Electromagnetic Interference (EMI)

Based on a simple application running on the product (toggling 2 LEDs through the I/O

ports), the product is monitored in terms of emission. This emission test is in line with the

norm SAE J 1752/3 which specifies the board and the loading of each pin.

13.7.3

Absolute maximum ratings (electrical sensitivity)

Based on three different tests (ESD, and LU) using specific measurement methods, the

product is stressed in order to determine its performance in terms of electrical sensitivity.

For more details, refer to the application note AN1181.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts*(n+1) supply pin). This test

conforms to the JESD22-A114A/A115A standard.

Static latchup (LU)

3 complementary static tests are required on 10 parts to assess the latchup performance. A

supply overvoltage (applied to each power supply pin) and a current injection (applied to

each input, output and configurable I/O pin) are performed on each sample. This test

conforms to the EIA/JESD 78 IC latch-up standard. For more details, refer to the application

note AN1181.

Table 67.

EMI characteristics

Symbol

Parameter

Conditions

Monitored

frequency

band

Max vs.

[fOSC/fCPU]

Unit

16/8 MHz

SEMI

Peak level(1)

Data based on characterization results, not tested in production.

VDD=5V, TA=+25 °C, SDIP32

package conforming to

SAE J 1752/3(2)

Refer to application note AN1709 for data on other package types.

0.1 MHz to

30 MHz

dBµV

30 MHz to

130 MHz

130 MHz to

1GHz

SAE EMI Level

3.5

Table 68.

Absolute maximum ratings

Symbol

Ratings

Conditions

Maximum

value(1)

Data based on characterization results, not tested in production.

Unit

VESD(HBM)

Electrostatic discharge voltage

(human body model)

TA=+25 °C

2000

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