MCP98243-BESLASHMC datasheet(3/62 Pages) MICROCHIP

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DS22153B-page 3

MCP98243

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings †

VDD.................................................................................. 6.0V

Voltage at all Input/Output pins ............... GND – 0.3V to 6.0V

Pin A0 ................................................... GND – 0.3V to 12.5V

Storage temperature .....................................-65°C to +150°C

Ambient temp. with power applied ................-40°C to +125°C

Junction Temperature (TJ) .......................................... +150°C

ESD protection on all pins (HBM:MM) ................. (4 kV:300V)

Latch-Up Current at each pin (25°C) ....................... ±200 mA

†Notice: Stresses above those listed under “Maximum

ratings” may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at

those or any other conditions above those indicated in the

operational listings of this specification is not implied.

Exposure to maximum rating conditions for extended periods

may affect device reliability.

TEMPERATURE SENSOR DC CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, VDD = 3.0V to 3.6V, GND = Ground,

and TA = -20°C to +125°C.

Parameters

Sym

Min

Typ

Max

Unit

Conditions

Temperature Sensor Accuracy

+75°C < TA ≤ +95°C

TACY

-1.0

±0.2

+1.0

°C

JC42.4 - TSE2002B3

Grade B Accuracy Specification

+40°C < TA ≤ +125°C

-2.0

±0.5

+2.0

°C

-20°C < TA ≤ +125°C

-3.0

±1

+3.0

°C

TA = -40°C

—

-1

—

°C

Temperature Conversion Time

0.25°C/bit

tCONV

—

125

15 s/sec (typical) (See Section 5.2.4)

Power Supply

Specified Voltage Range

VDD

3.0

—

3.6

JC42.4 Specified Voltage Range

Operating Voltage Range

VDD

2.7

—

5.5

Note 1

Operating Current

IDD_TS

—

200

500

µA

EEPROM Inactive

Shutdown Current

ISHDN

—

µA

EEPROM Inactive, I2C Bus Inactive

Power On Reset (POR)

VPOR_TS

—

2.2

—

Threshold for falling VDD voltage

Power Supply Rejection,

TA = +25°C

Δ°C/ΔVDD

—±0.3

—

°C/V VDD = 2.7V to 5.5V

—

±0.15

—

°C

VDD = 3.3V+150 mVPP AC (0 to 1 MHz)

Event Output (Open-Drain output, external pull-up or pull-down resistor required), see Section 5.2.3

High-level Current (leakage)

IOH

——

µA

VOH = VDD (Active-Low, Pull-up Resistor)

Low-level Voltage

VOL

——

0.4

IOL= 3 mA (Active-Low, Pull-up Resistor)

Low-level Current (leakage)

IOL

——

µA

VOL = VSS (Active-High, Pull-down

Resistor)

High-level Voltage

VOH

——

VDD-0.5

IOH= 3 mA (Active-High, Pull-down

Resistor)

Thermal Response, from +25°C (Air) to +125°C (oil bath)

DFN/UDFN/TDFN-8

tRES

—

0.7

—

Time to 63% (89°C)

TSSOP-8

—

1.4

—

Note 1: Characterized but not production tested. Also, see Section 2.0 “Typical Performance Curves”.

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