2SC6140

2009-10-15

1

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC6140

○

Audio Frequency Amplifier Applications

• High collector voltage

• Small collector output capacitance

• High transition frequency

• Complementary to 2SA2220

Characteristics

Symbol

Rating

Unit

Collector-base voltage

160

V

Collector-emitter voltage

160

V

Emitter-base voltage

6

V

DC

1.5

A

Collector current

Pulse

2.5

A

Base current

0.5

A

Collector power dissipation

1.8

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note 1: Ensure that the channel temperature does not exceed 150°C

during use of the device.

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

単位

: mm

JEDEC

⎯

JEITA

⎯

TOSHIBA

2-10T1A

Weight: 1.5 g (typ.)