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TPC6901A 데이터시트(PDF) 4 Page - Toshiba Semiconductor

부품명 TPC6901A
상세설명  Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type
PDF  7 Pages
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
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TPC6901A 데이터시트(HTML) 4 Page - Toshiba Semiconductor

  TPC6901A Datasheet HTML 1Page - Toshiba Semiconductor TPC6901A Datasheet HTML 2Page - Toshiba Semiconductor TPC6901A Datasheet HTML 3Page - Toshiba Semiconductor TPC6901A Datasheet HTML 4Page - Toshiba Semiconductor TPC6901A Datasheet HTML 5Page - Toshiba Semiconductor TPC6901A Datasheet HTML 6Page - Toshiba Semiconductor TPC6901A Datasheet HTML 7Page - Toshiba Semiconductor  
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TPC6901A
2009-07-06
4
NPN
*: Single nonrepetitive pulse
Ta
= 25°C
Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices aren’t
mounted on an FR4 board
(glass epoxy, 1.6 mm thick, Cu
area: 645 mm
2).
Single-device operation
These characteristic curves
must be derated linearly with
increase in temperature.
0.1
0.001
1
100
10
0.1
1
10
0.001
1
1
10
10000
1000
100
0.01
0.1
Ta
= 100°C
−55°C
25°C
0.001
0.1
1
10
1
0.01
0.1
Ta
= −55°C
100°C
25°C
0.001
0.01
1
1
0.1
0.01
0.1
Ta
= 100°C
−55°C
25°C
0
0
0.2
1.0
1.2
0.8
1.0
−55°C
Ta
= 100°C
25°C
Collector
−emitter voltage VCE
(V)
IC – VCE
Collector current IC (A)
hFE – IC
Collector current IC (A)
VCE (sat) – IC
Collector current IC (A)
VBE (sat) – IC
Base
−emitter voltage VBE (V)
IC – VBE
Collector-emitter voltage VCE (V)
Safe Operation Area
0
0
0.4
0.8
1.0
1.2
0.2
0.8
1.0
Common emitter
Ta
= 25°C
Single nonrepetitive pulse
8
6
2
IB = 1 mA
20
10
15
4
0.6
0.4
0.6
0.2
1ms*
10ms*
100μs*
IC max (Pulsed)*
10μs*
DC operation
Ta = 25°C
IC max(Continuous)*
10s*
100ms*
VCEO max
0.2
0.6
0.4
0.8
0.4
0.6
Common emitter
VCE = 2 V
Single nonrepetitive pulse
Common emitter
IC/IB = 50
Single nonrepetitive pulse
Common emitter
IC/IB = 50
Single nonrepetitive pulse
Common emitter
VCE = 2 V
Single nonrepetitive pulse
0.01



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