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DG808BC45 데이터시트(PDF) 2 Page - Dynex Semiconductor

부품명 DG808BC45
상세설명  Gate Turn-off Thyristor
PDF  12 Pages
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제조업체  DYNEX [Dynex Semiconductor]
홈페이지  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

DG808BC45 데이터시트(HTML) 2 Page - Dynex Semiconductor

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SEMICONDUCTOR
DG808BC45
2/12
www.dynexsemi.com
SURGE RATINGS
Symbol
Parameter
Test Conditions
Max.
Units
ITSM
Surge (non repetitive) on-state current
10ms half sine. Tj = 125°C
16.0
kA
I
2t
I
2t for fusing
10ms half sine. Tj = 125°C
1.28
MA
2s
diT/dt
Critical rate of rise of on-state current
VD = 3000V, IT = 3000A, Tj = 125°C, IFG > 40A,
Rise time > 1.0 s
400
A/ s
To 66% VDRM; RGK
1.5 , Tj = 125°C
100
V/ s
dVD/dt
Rate of rise of off-state voltage
To 66% VDRM; VRG
-2V, Tj = 125°C
1000
V/ s
LS
Peak stray inductance in snubber
circuit
IT = 3000A, VD = VDRM, Tj = 125
oC, dI
GQ = 40A/us,
CS = 4.0uF
200
nH
GATE RATINGS
Symbol
Parameter
Test Conditions
Min.
Max.
Units
VRGM
Peak reverse gate voltage
This value may exceeded during turn-off
-
16
V
IFGM
Peak forward gate current
-
100
A
PFG(AV)
Average forward gate power
-
20
W
PRGM
Peak reverse gate power
-
24
kW
diGQ/dt
Rate of rise of reverse gate current
30
60
A/ s
tON(min)
Minimum permissible on time
50
-
s
tOFF(min)
Minimum permissible off time
100
-
s
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions
Min.
Max.
Units
Double side cooled
DC
-
0.014
°C/W
Anode DC
-
0.0233
°C/W
Rth(j-hs)
Thermal resistance – junction to
heatsink surface
Single side cooled
Cathode DC
-
0.035
°C/W
Rth(c-hs)
Contact thermal resistance
Clamping force 36.0kN
With mounting compound
Per contact
-
0.0036
°C/W
Tvj
Virtual junction temperature
On-state (conducting)
-40
125
°C
Top/Tstg
Operating junction/storage
temperature range
-40
125
°C
Fm
Clamping force
28.0
44.0
kN



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