2SC2655 datasheet(1/2 Pages) WEITRON

부품명	2SC2655

상세설명	NPN General Purpose Transistors

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2SC2655

NPN General Purpose Transistors

1.EMITTER

3.BASE

2.COLLECTOR

1

2

3

Lead(Pb)-Free

P b

TO-92MOD

1/2

19-Feb-09

WEITRON

http://www.weitron.com.tw

ELECTRICAL

CHARACTERISTICS（Tamb=25℃

unless

otherwise

specified）

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=100μA,IE=0

50

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic=10mA,IB=0

50

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100μA,IC=0

5

V

Collector cut-off current

ICBO

VCB=50V,IE=0

1

μ

A

Emitter cut-off current

IEBO

VEB=5V,IC=0

1

μ

A

hFE(1)

VCE=2V,IC=500mA

70

240

DC current gain

hFE(2)

VCE=2V,IC=1.5A

40

Collector-emitter saturation voltage

VCE(sat)

IC=1A,IB=0.05A

0.5

V

Base-emitter saturation voltage

VBE(sat)

IC=1A,IB=0.05A

1.2

V

Transition frequency

fT

VCE=2V,IC=0.5A

100

MHz

Collector output capacitance

Cob

VCB=10V,IE=0,f=1MHz

30

pF

Tune on Time

ton

0.1

Storage Time

tstg

1.0

Switch time

Fall Time

tf

Vcc=30V,Ic=1A,

I

B1=-IB2=0.05A

0.1

μ

s

CLASSIFICATION OF

hFE(1)

Rank

O

Y

Range

70-140

120-240

유사한 부품 번호 - 2SC2655

제조업체	부품명	데이터시트	상세설명
Toshiba Semiconductor	2SC2655	179Kb / 4P	TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS) 08-Sep-1998
Unisonic Technologies	2SC2655	61Kb / 4P	POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
Toshiba Semiconductor	2SC2655	139Kb / 5P	Silicon NPN Epitaxial Type (PCT Process)
Unisonic Technologies	2SC2655	210Kb / 4P	POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
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2SC2655 데이터시트(PDF) 1 Page - Weitron Technology

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