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2SC2714 데이터시트(PDF) 1 Page - Weitron Technology |
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2SC2714 데이터시트(HTML) 1 Page - Weitron Technology |
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1 / 2 page ![]() ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=10μA,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO Ic=1mA,IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 4 V Collector cut-off current ICBO VCB=18V,IE=0 0.5 μA Emitter cut-off current IEBO VEB=4V,IC=0 0.5 μA DC current gain hFE(1) VCE=6V,IC=1mA 40 200 Collector-emitter saturation voltage VCE(sat) IC=10mA,IB=1mA 0.3 V Transition frequency fT VCE=6V,IC=1mA 400 MHz Power Gain Gpe VCE=6V,Ic=1mA, f=100HZ 17 pF Noise figure NF VCE=6V,Ic=1mA, f=100HZ 5 dB CLASSIFICATION OF hFE(1) Rank R O Y Range 40-80 70-140 100-200 Marking QR QO QY http://www.weitron.com.tw WEITRON SOT-23 2SC2714 NPN General Purpose Transistors 1/2 19-Feb-09 P b Lead(Pb)-Free |
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