SSFP6N40 datasheet(2/2 Pages) GOOD-ARK

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SSFP6N40

StarMOS

T Power MOSFET

Electrical Characteristics @TJ=25

ْC(unless otherwise specified)

Parameter

Min.

Typ.

Max. Units

Test Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

400

—

VGS=0V,ID=250

μA

△V(BR)DSS/△TJ Breakdown Voltage Temp.Coefficient

—

0.50

—

ْC Reference to 25ْC,ID=1mA

RDS(on)

Static Drain-to-Source On-resistance

—

1.0

Ω VGS=10V,ID=3.3A ④

VGS(th)

Gate Threshold Voltage

2.0

—

4.5

VDS= VGS,ID=250

μA

gfs

Forward Transconductance

3.1

—

VDS=50V,ID=3.3A

—

VDS=400V,VGS=0V

IDSS

Drain-to-Source Leakage current

—

250

μA

VDS=320V,VGS=0V,TJ=125

ْC

Gate-to-Source Forward leakage

—

100

VGS=30V

IGSS

Gate-to-Source Reverse leakage

—

-100

VGS=-30V

Total Gate Charge

—

Qgs

Gate-to-Source charge

—

5.8

Qgd

Gate-to-Drain("Miller") charge

—

9.3

ID=3.5A

VDS=320V

VGS=10V

td(on)

Turn-on Delay Time

—

Rise Time

—

td(off)

Turn-Off Delay Time

—

Fall Time

—

VDD=200V

ID=3.5A

RG=12

Ω

RD=57

Ω

Internal Drain Inductance

—

4.5

—

Internal Source Inductance

—

7.5

—

Between lead,

6mm(0.25in.)

from

package

and center of

die contact

Ciss

Input Capacitance

—

600

—

Coss

Output Capacitance

—

103

—

Crss

Reverse Transfer Capacitance

—

4.0

—

VGS=0V

VDS=25V

=1.0MHZ

Source-Drain Ratings and Characteristics

Parameter

Min.

Typ.

Max.

Units

Test Conditions

Continuous Source Current

(Body Diode)

—

5.5

ISM

Pulsed Source Current

(Body Diode)

①

—

22.0

MOSFET symbol

showing the

integral reverse

p-n junction diode.

VSD

Diode Forward Voltage

—

1.6

TJ=25

ْC,IS=5.5A,VGS=0V ④

trr

Reverse Recovery Time

—

370

550

Qrr

Reverse Recovery Charge

—

1.6

2.4

TJ=25

ْC,IF=3.5A

di/dt=100A/

μs ④

ton

Forward Turn-on Time

Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)

Notes:

① Repetitive rating;pulse width limited by

③ ISD≤5.5A,di/dt≤90A/μS,VDD≤V(BR)DSS,

max.junction temperature

TJ≤150

ْ C

② L = 19mH, IAS = 5.5 A, RG = 25Ω,

④ Pulse width≤300μS; duty cycle≤2%

Starting TJ = 25°C

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