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BUJD103AD 데이터시트(PDF) 1 Page - NXP Semiconductors |
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BUJD103AD 데이터시트(HTML) 1 Page - NXP Semiconductors |
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1 / 14 page ![]() BUJD103AD NPN power transistor with integrated diode Rev. 02 — 6 October 2009 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic package. 1.2 Features and benefits Fast switching High voltage capability Integrated anti-parallel E-C diode Very low switching and conduction losses 1.3 Applications DC-to-DC converters Electronic lighting ballasts Inverters Motor control systems 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit IC collector current - - 4 A Ptot total power dissipation see Figure 4Tmb ≤ 25 °C --80 W VCESM collector-emitter peak voltage VBE = 0 V - - 700 V Static characteristics hFE DC current gain IC = 500 mA; VCE =5V; see Figure 12Tj =25°C 13 22 32 VCE =5V; IC =3A; Tmb = 25 °C; see Figure 12 - 12.5 - |
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