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SSF8421 데이터시트(PDF) 3 Page - Silikron Semiconductor Co.,LTD. |
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SSF8421 데이터시트(HTML) 3 Page - Silikron Semiconductor Co.,LTD. |
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3 / 4 page ![]() SSF8421 DRAIN-SOURCE DIODE CHARACTERISTICS V ©Silikron Semiconductor CO.,LTD 2008.12.1 Version : 1.0 page 3 of 4 A Good-Ark Company GS=0V,IS=1.25A N-Ch 1.2 V Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-1.25A P-Ch -1.2 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. N-Channel THERMAL CHARACTERISTICS Square Wave Pluse Duration(sec) Figure 1: Normalized Maximum Transient Thermal Impedance P-Channel THERMAL CHARACTERISTICS Square Wave Pluse Duration(sec) Figure 2: Normalized Maximum Transient Thermal Impedance |
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