2SB772 datasheet(1/3 Pages) DAYA

부품명	2SB772

상세설명	PNP SILICON POWER TRANSISTOR

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제조업체	DAYA [Daya Electric Group Co., Ltd.]

홈페이지	http://www.cndaya.com

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PNP SILICON POWER TRANSISTOR

2SB772

PNP SILICON POWER TRANSISTOR

DATA SHEET

DESCRIPTION

The 2SB772 is PNP silicon transistor suited for the output stage of 3

W audio amplifier, voltage regulator, DC-DC converter and relay

driver.

FEATURES

• Low saturation voltage

VCE(sat)

≤ −0.5 V (IC = −2 A, IB = −0.2 A)

• Excellent hFE linearity and high hFE

hFE = 60 to 400 (VCE =

−2 V, IC = −1 A)

• Less cramping space required due to small and thin package and

reducing the trouble for attachment to a radiator.

No insulator bushing required.

ABSOLUTE MAXIMUM RATINGS

Maximum Temperature

Storage Temperature

−55 to +150°C

Junction Temperature

150

°C Maximum

Maximum Power Dissipation

Total Power Dissipation (TA = 25

°C)

1.0 W

Total Power Dissipation (TC = 25

°C)

10 W

Maximum Voltages and Currents (TA = 25

°C)

VCBO

Collector to Base Voltage

−40 V

VCEO

Collector to Emitter Voltage

−30 V

VEBO

Emitter to Base Voltage

−5.0 V

IC(DC)

Collector Current (DC)

−3.0 A

IC(pulse)

Note

Collector Current (pulse)

−7.0 A

Note Pulse Test PW

≤ 350

µs, Duty Cycle ≤ 2%

ELECTRICAL CHARACTERISTICS (TA = 25

°C)

CHARACTERISTIC

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

DC Current Gain

hFE1

VCE =

−2.0 V, IC = −20 mA

Note

30

220

DC Current Gain

hFE2

VCE =

−2.0 V, IC = −1.0 mA

Note

60

160

400

Gain Bandwidth Product

fT

VCE =

−5.0 V, IC = −0.1 A

80

MHz

Output Capacitance

Cob

VCB =

−10 V, IE = 0, f = 1.0 MHz

55

pF

Collector Cutoff Current

ICBO

VCB =

−30 V, IE = 0 A

−1.0

µA

Emitter Cutoff Current

IEBO

VEB =

−3.0 V, IC = 0 A

−1.0

µA

Collector Saturation Voltage

VCE(sat)

IC =

−2.0 A, IB = −0.2 A

Note

−0.3

−0.5

V

Base Saturation Voltage

VBE(sat)

IC =

−2.0 A, IB = −0.2 A

Note

−1.0

−2.0

V

Note Pulse Test: PW

≤ 350

µs, Duty Cycle ≤ 2%

CLASSIFICATION OF hFE

Rank

R

Q

P

E

Range

60 to 120

100 to 200

160 to 320

200 to 400

Remark Test Conditions: VCE =

−2.0 V, IC = 1.0 A

PACKAGE DRAWING (Unit: mm)

8.5 MAX.

3.2 ±0.2

12 TYP.

2.3 TYP.

1.2 TYP.

0.55

2.8 MAX.

0.8

+0.08

–0.05

+0.08

–0.05

1: Emitter

2: Collector: connected to mounting plane

3: Base

유사한 부품 번호 - 2SB772

제조업체	부품명	데이터시트	상세설명
Unisonic Technologies	2SB772	46Kb / 2P	MEDIUM POWER LOW VOLTAGE TRANSISTOR
NEC	2SB772	272Kb / 3P	PNP SILICON POWER TRANSISTOR
Weitron Technology	2SB772	263Kb / 5P	PNP/NPN Epitaxial Planar Transistors
STMicroelectronics	2SB772	90Kb / 8P	PNP MEDIUM POWER TRANSISTOR 09-Sep-2005
First Components Intern...	2SB772	177Kb / 3P	PNP EPITASIAL SILICON TRANSISTOR

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