DB-4 datasheet(1/1 Pages) DAYA

부품명	DB-4

상세설명	SILICON BIDIRECTIONAL DIACS

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제조업체	DAYA [Daya Electric Group Co., Ltd.]

홈페이지	http://www.cndaya.com

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DB-3, DB-4

SILICON BIDIRECTIONAL DIACS

The glass passivated, three-layer, two terminal, axial lead,

hermetically sealed diacs are designed specifically for

triggering thyristors. They demonstrate low breakover current

at breakover voltage as they withstand peak pulse current.

The breakover symmetry is within four volts with a typical

breakover voltage of DB-3 32 V, DB-4 40 V. These diacs are

intended for use in thyristor phase control, circuits for

lamp-dimming, universal-motor speed controls, and heat

controls.

Storage Temperature Range TS - 40 OC to +150 OC

Operating Temperature Range TJ - 40OC to +100 OC

MAXIMUM RATINGS at 50 OC Ambient

Peak Current (10 µs duration, 120 cycle repetition rate) IP ± 2 A Max.

Peak output voltage eP 3 ± Volts Max.

1)

Characteristics at Ta = 25 OC

Parameter

Symbol

Min.

Max.

Unit

DB-3

28

36

Breakover Voltage

DB-4

V(BR)1 and V(BR)2

35

45

V

Breakover Currents

I(BR)1 and I(BR)2

-

200

µA

Breakover Voltage Symmetry

[V(BR)1]-[V(BR)2]

-

3.8

V

Dynamic Breakover Voltage

ΔI = [IBR to IF = 10 mA]

|

ΔV ± |

5

-

V

Thermal Impedance Junction to Ambient Air

RθJA

-

60

O

C/W

Max. 3.9

Max. 1.9

Glass Case DO-35

Max. 0.5

Min. 27.5

XXX

Cathode Band

Part No.

Dimensions in mm

Black

60~

120 V

ep

DIAC

0.1 uF

CIRCUIT FOR PEAK OUTPUT VOLTAGE TEST

20

1)

3.3 K

120 VAC

60 Hz

load up to 1500 W

200 K

0.1 uF

100 V

TRIAC

BILATERAL

TRIGGER

DIAC

TYPICAL DIAC-TRIAC FULL-WAVE PHASE

CONTROL CIRCUIT

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SEMTECH ELECTRONICS LTD...	LSDB3	168Kb / 1P	SILICON BIDIRECTIONAL DIACS
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Diode Semiconductor Kor...	DB3M	88Kb / 2P	SILICON BIDIRECTIONAL DIACS
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SAMYANG ELECTRONICS CO....	DB3	400Kb / 2P	SILICON BIDIRECTIONAL DIACS
	DB3	399Kb / 2P	SILICON BIDIRECTIONAL DIACS
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DB-4 데이터시트(PDF) 1 Page - Daya Electric Group Co., Ltd.

DB-4 데이터시트(HTML) 1 Page - Daya Electric Group Co., Ltd.

유사한 부품 번호 - DB-4

유사한 설명 - DB-4

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