ABSOLUTE MAXIMUM RATINGS

(1)

ISO7421, ISO7421M

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

TERMINAL FUNCTIONS

TERMINAL

I/O

DESCRIPTION

NAME

NO.

INA

7

I

Input, channel A

INB

3

I

Input, channel B

GND1

4

–

GND2

5

–

OUTA

2

O

Output, channel A

OUTB

6

O

Output, channel B

1

–

8

–

INPUT SIDE

OUTPUT SIDE

INPUT

OUTPUT

VCC

VCC

IN

OUT

H

H

PU

PU

L

L

Open

H

PD

PU

X

H

(1)

X = Irrelevant; H = High level; L = Low level

AVAILABLE OPTIONS

RATED

INPUT

CHANNEL

MARKED

ORDERING

PRODUCT

PACKAGE

ISOLATION

THRESHOLD

DIRECTION

AS

NUMBER

ISO7421D (rail)

ISO7421

–40°C to 105°C

IS7421

ISO7421DR (reel)

~1.5 V (TTL)

Opposite

2.5 kVrms

D-8

ISO7421MD (rail)

(CMOS compatible)

directions

ISO7421M

–55°C to 125°C

I7421M

ISO7421MDR

(PREVIEW)

(reel)

VALUE

–0.5 V to 6 V

Voltage at IN, OUT

–0.5 V to 6 V

Output current

±15 mA

Human-body model

JEDEC Standard 22, Test Method A114-C.01

±4 kV

Electrostatic

Field-induced charged-device

ESD

JEDEC Standard 22, Test Method C101

All pins

±1.5 kV

discharge

model

Machine model

ANSI/ESDS5.2-1996

±200 V

150°C

(1)

Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating

conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltage values except differential I/O bus voltages are with respect to network ground terminal and are peak voltage values.

2

Submit Documentation Feedback

Copyright © 2009, Texas Instruments Incorporated

Product Folder Link(s): ISO7421 ISO7421M