MBD110DWT1 MBD330DWT1 MBD770DWT1

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse Breakdown Voltage

(IR = 10 µA)

MBD110DWT1

MBD330DWT1

MBD770DWT1

V(BR)R

7.0

30

70

10

—

—

—

—

—

Volts

Diode Capacitance

(VR = 0, f = 1.0 MHz, Note 1)

MBD110DWT1

CT

—

0.88

1.0

pF

Total Capacitance

(VR = 15 Volts, f = 1.0 MHz)

MBD330DWT1

(VR = 20 Volts, f = 1.0 MHz)

MBD770DWT1

CT

—

—

0.9

0.5

1.5

1.0

pF

Reverse Leakage

(VR = 3.0 V)

MBD110DWT1

(VR = 25 V)

MBD330DWT1

(VR = 35 V)

MBD770DWT1

IR

—

—

—

0.02

13

9.0

0.25

200

200

µA

nAdc

nAdc

Noise Figure

(f = 1.0 GHz, Note 2)

MBD110DWT1

NF

—

6.0

—

dB

Forward Voltage

(IF = 10 mA)

MBD110DWT1

(IF = 1.0 mAdc)

MBD330DWT1

(IF = 10 mA)

(IF = 1.0 mAdc)

MBD770DWT1

(IF = 10 mA)

VF

—

—

—

—

—

0.5

0.38

0.52

0.42

0.7

0.6

0.45

0.6

0.5

1.0

Vdc