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MMBT3906 데이터시트(PDF) 1 Page - Daya Electric Group Co., Ltd. |
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MMBT3906 데이터시트(HTML) 1 Page - Daya Electric Group Co., Ltd. |
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1 / 3 page ![]() SOT-23 Plastic-Encapsulate Transistors MMBT3906 TRANSISTOR (PNP) FEATURES As complementary type, the NPN transistor MMBT3904 is Recommended Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS (TA=25 ℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.2 A PC Collector Power Dissipation 0.3 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -10μA,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA, IC=0 -5 V Collector cut-off current ICBO VCB= -40V, E=0 -0.1 μA Collector cut-off current ICEX VCE=-30V,VBE(off)=-3V -50 nA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 μA hFE(1) VCE=-1V, IC=-10mA 100 300 hFE(2) VCE= -1V, IC=-50mA 60 DC current gain hFE(3) VCE= -1V, IC=-100mA 30 Collector-emitter saturation voltage VCE(sat) IC=-50mA, IB=-5mA -0.4 V Base-emitter saturation voltage VBE(sat) IC=- 50mA, IB=- 5mA -0.95 V Transition frequency fT VCE=-20V, IC=-10mA, f=100MHz 250 MHz Delay Time td 35 nS Rise Time tr VCC=-3.0V,VBE=-0.5V IC=-10mA,IB1=-1.0mA 35 nS Storage Time ts 225 nS Fall Time tf VCC=-3.0V,IC=-10mA IB1=IB2=-1.0mA 75 nS CLASSIFICATION OF hFE1 Rank O Y Range 100-200 200-300 SOT-23 1. BASE 2. EMITTER 3. COLLECTOR |
유사한 부품 번호 - MMBT3906 |
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유사한 설명 - MMBT3906 |
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