ICS9P936 datasheet(3/12 Pages) IDT

3 / 12 page

IDTTM/ICSTM

Low Skew Dual Bank DDR I/II Fan-out Buffer

1084C 12/03/09

ICS9P936

Low Skew Dual Bank DDR I/II Fan-out Buffer

Absolute Max

Supply Voltage

-0.5V to 3.6V

Logic Inputs

GND –0.5 V to VDD +0.5 V or 3.6V, whichever is less

Ambient Operating Temperature

0°C to +70°C

Case Temperature

115°C

Storage Temperature

–65°C to +150°C

Stresses above those listed under

Absolute Maximum Ratings may cause permanent damage to the device. These ratings are

stress specifications only and functional operation of the device at these or any other conditions above those listed in the

operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods

may affect product reliability.

Electrical Characteristics - Input/Supply/Common Output Parameters (VDDQ2.5/1.8 = 1.8V +/- 0.1V)

TA = 0 - 70°C; Supply Voltage AVDD = 2.5V +/- 0.2V(unless otherwise stated)

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

Input High Current

IIH

VI = VDDQ or GND

-40

µA

Input Low Current

IIL

VI = VDDQ or GND

µA

IDDAVDD2.5

RL = 120Ω, CL = 12pf @ 266MHz

IDDVDDQ2.5/1.8 RL = 120Ω, CL = 12pf @ 266MHz

164

180

Input Clamp Voltage

VIK

VDDQ = 1.8V Iin = -18mA

-1.2

High-level output voltage

VOH

IOH = -9 mA

1.1

Low-level output voltage

VOL

IOL=9 mA

0.6

Input Capacitance

CIN

VI = GND or VDDQ

Output Capacitance

COUT

VOUT = GND or VDDQ

Input clock slew rate

tsl(i)

Input clock

2.5

V/ns

Operating Supply

Current

SPEC

ICS9P936 데이터시트(PDF) 3 Page - Integrated Device Technology

ICS9P936 데이터시트(HTML) 3 Page - Integrated Device Technology

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

데이터시트 다운로드

링크 URL