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2

CPC3710C

R00A.8

Absolute Maximum Ratings are stress ratings. Stresses in

excess of these ratings can cause permanent damage to

the device. Functional operation of the device at conditions

beyond those indicated in the operational sections of this

data sheet is not implied.

Absolute Maximum Ratings (@ 25˚ C)

Electrical Characteristics

Parameter

Ratings

Units

Drain-to-Source Voltage

250

V

Gate-to-Source Voltage

±20

V

Total Package Dissipation

W

Operational Temperature

-55 to +125

º

C

Storage Temperature

-55 to +125

º

C

1 Mounted on FR4 board 1"x1"x0.062"

Package

I

I

Power Dissipation @TA=25ºC

I

DR

I

DRM

SOT-89

220mA

600mA

15

220mA

600mA

1 Mounted on FR4 board 1"x1"x0.062"

Thermal Characteristics

Parameter

Symbol

Conditions

Min

Typ

Max

Units

Drain-to-Source Breakdown Voltage

BV

DSX

V

250

-

-

V

Gate-to-Source Off Voltage

V

GS(off)

V

-1.6

-2.5

-3.9

V

Change in V

d

V

-

-

3.3

mV/ºC

Gate Body Leakage Current

I

GSS

V

-

-

100

nA

Drain-to-Source Leakage Current

I

D(off)

V

-

-

1

µA

V

-

-

1

mA

Saturated Drain-to-Source Current

I

DSS

V

220

-

-

mA

Static Drain-to-Source ON-State Resistance

R

DS(on)

V

-

-

10

Ω

Change in RDS(on) with Temperatures

dR

V

-

-

0.86

%/ºC

Forward Transconductance

G

FS

I

225

-

-

m

Input Capacitance

C

ISS

V

V

f= 1Mhz

-

100

350

pF

Common Source Output Capacitance

C

OSS

30

80

Reverse Transfer Capacitance

C

RSS

15

40

Turn-ON Delay Time

t

d(on)

V

I

V

R

-

23

35

ns

Rise Time

t

r

8

20

Turn-OFF Delay Time

t

d(off)

17

25

Fall time

t

f

70

80

Source-Drain Diode Voltage Drop

V

SD

V

-

0.6

1.8

V