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IKCS12F60B2C 데이터시트(PDF) 13 Page - Infineon Technologies AG |
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IKCS12F60B2C 데이터시트(HTML) 13 Page - Infineon Technologies AG |
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13 / 18 page ![]() CIPOS™ IKCS12F60B2A IKCS12F60B2C Data Sheet 13/18 Rev. 2.2, March 2009 Characteristics 0V 1V 2V 3V 0A 3A 6A 9A 12A 15A 125°C 150°C V GE=25°C 0V 1V 2V 0A 3A 6A 9A 12A 15A 125°C 150°C V GE=25°C VCE, COLLECTOR EMITTER VOLTAGE VF FORWARD VOLTAGE Figure 5. Typical IGBT output characteristic (VDD = 15V) Figure 6. Typical diode forward current as a function of forward voltage 0A 5A 10A 15A 10ns 100ns 1000ns t f t d(on) t r t d(off) 25°C 50°C 75°C 100°C 125°C 10ns 100ns 1000ns t f t d(on) t r t d(off) IC, COLLECTOR CURRENT TvJ, JUNCTION TEMPERATURE Figure 7. Typical switching times as a function of collector current (inductive load, TJ=150°C, VCE = 300V, VDD = 15V Dynamic test circuit in Figure A) Figure 8. Typical switching times as a function of junction temperature (inductive load, VCE = 300V, VDD = 15V, IC = 6A Dynamic test circuit in Figure A) |
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