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TLE7809G 데이터시트(PDF) 33 Page - Infineon Technologies AG

부품명 TLE7809G
상세설명  Integrated double low-side switch, high-side/LED driver, hall supply, wake-up inputs and LIN communication with embedded MCU (16kB Flash)
PDF  52 Pages
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제조업체  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

TLE7809G 데이터시트(HTML) 33 Page - Infineon Technologies AG

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Data Sheet
33
Rev. 3.01, 2008-04-15
TLE7809G
General Product Characteristics
16
General Product Characteristics
16.1
Absolute Maximum Ratings
Table 12
Absolute Maximum Ratings1)
T
j = -40 °C to +125 °C; all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
1) Not subject to production test, specified by design.
Pos.
Parameter
Symbol
Limit Values
Unit
Conditions
Min.
Max.
Voltages
16.1.1
Supply voltage
V
S
-0.3
40
V
–
16.1.2
Regulator output voltage
V
CC
-0.3
5.5
V
–
16.1.3
Input voltage at MON1-4
V
MONx
V
S - 40
40
V
also for pulses according to
ISO 7637; external series
resistor
R > 1.0 kΩ required
16.1.4
Input voltage at MON5/HS_LED
(output)
V
MON5
V
S - 40
V
S + 0.3
V
MON5 input voltage limited
due to LED driver
functionality.
R > 1.0 kΩ required
16.1.5
Input voltage at
V
BAT_SENSE
V
BATSENSE
V
S - 40
40
V
also for pulses according to
ISO 7637; external series
resistor
R > 1.0 kΩ required
16.1.6
Low-Side Switches LSx
V
LSx
-0.3
V
LSx_CL
V
limited by output clamping
voltage & clamping energy
16.1.7
SUPPLY Output
V
Supply
-0.3
V
S + 0.3
V
–
16.1.8
Logic input voltages (TMS, TCK,
TDI, CLKIN)
V
I
-0.3
V
CC +
0.3
V0 V <
V
S < 27 V
0 V <
V
CC < 5.5 V
16.1.9
Logic output voltage (TDO,
RESET)
V
DRI,RD
-0.3
V
CC +
0.3
V0 V <
V
S < 27 V
0 V <
V
CC < 5.5 V
16.1.10 LIN line bus input voltages
V
bus
V
S - 40
40
V
–
16.1.11 Electrostatic discharge voltage
“HBM” at pin LIN, MONx,
V
BAT_SENSE vs. GND
V
ESD
-4
4
kV
EIA/JESD22-A114-B
C = 100 pF,
R = 1.5 kΩ
16.1.12 Electrostatic discharge voltage
“HBM” at pin
V
DDC vs. GND
V
ESD
-600
600
V
EIA/JESD22-A114-B
C = 100 pF; R = 1.5 kΩ
16.1.13 Electrostatic discharge voltage
“HBM” at any other pin
V
ESD
-2
2
kV
EIA/JESD22-A114-B
C = 100 pF; R = 1.5 kΩ
16.1.14 Electrostatic discharge voltage
“CDM” at any pin
V
ESD
-500
500
V
Charged device model;
according to AEC Q100-011
Rev-B
Temperatures
16.1.15 Junction temperature
T
j
-40
125
°C–
16.1.16 Storage temperature
T
stg
-50
150
°C–



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