ATtiny45 datasheet(146/196 Pages) ATMEL

146 / 196 page

146

7598H–AVR–07/09

ATtiny25/45/85

21.8.5

Programming the EEPROM

The EEPROM is organized in pages, see Table 21-11 on page 142. When programming the

EEPROM, the data is latched into a page buffer. This allows one page of data to be pro-

grammed simultaneously. The programming algorithm for the EEPROM Data memory is as

follows (refer to Table 21-16):

Load Command “Write EEPROM”.

Load EEPROM Page Buffer.

Program EEPROM Page. Wait after Instr. 2 until SDO goes high for the “Page Program-

ming” cycle to finish.

Repeat 2 through 3 until the entire EEPROM is programmed or until all data has been

programmed.

End Page Programming by Loading Command “No Operation”.

21.8.6

Reading the Flash

The algorithm for reading the Flash memory is as follows (refer to Table 21-16):

Load Command "Read Flash".

Read Flash Low and High Bytes. The contents at the selected address are available at

serial output SDO.

21.8.7

Reading the EEPROM

The algorithm for reading the EEPROM memory is as follows (refer to Table 21-16):

Load Command “Read EEPROM”.

Read EEPROM Byte. The contents at the selected address are available at serial out-

put SDO.

21.8.8

Programming and Reading the Fuse and Lock Bits

The algorithms for programming and reading the Fuse Low/High bits and Lock bits are shown in

Table 21-16.

21.8.9

Reading the Signature Bytes and Calibration Byte

The algorithms for reading the Signature bytes and Calibration byte are shown in Table 21-16.

21.8.10

Power-off sequence

Set SCI to “0”. Set RESET to “1”. Turn V

CC power off.

ATtiny45 데이터시트(PDF) 146 Page - ATMEL Corporation