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HMF8M8F4VS 데이터시트(PDF) 4 Page - Hanbit Electronics Co.,Ltd

부품명 HMF8M8F4VS
상세설명  FLASH-ROM MODULE 8MByte (8M x 8-Bit) , SMM 80Pin
PDF  11 Pages
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제조업체  HANBIT [Hanbit Electronics Co.,Ltd]
홈페이지  http://www.hbe.co.kr
Logo HANBIT - Hanbit Electronics Co.,Ltd

HMF8M8F4VS 데이터시트(HTML) 4 Page - Hanbit Electronics Co.,Ltd

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HANBit
HMF8M8F4VS
URL: www.hbe.co.kr
HANBit Electronics Co., Ltd.
REV.02(August,2002)
4
Low Vcc Lock-Out Voltage
VLKO
1.5
V
ERASE AND PROGRAMMING PERFORMANCE
LIMITS
PARAMETER
MIN.
TYP.
MAX.
UNIT
COMMENTS
Block Erase Time
-
0.7
15
Sec
Excludes 00H programming
prior to erasure
Byte Programming Time
-
9
270
µS
Excludes system-level
overhead
Chip Programming Time
-
18
54
sec
Excludes system-level
overhead
CAPACITANCE
PARAMETER
SYMBOL
PARAMETER
DESCRIPTION
TEST SETUP
MIN.
MAX
UNIT
CIN
Input Capacitance
VIN = 0
10
pF
COUT
Output Capacitance
VOUT = 0
10
pF
CIN2
Control Pin Capacitance
VIN = 0
10
pF
Notes: Test conditions TA = 25
o C, f=1.0 MHz.
AC CHARACTERISTICS
u Read Only Operations Characteristics
PARAMETER
SYMBOLS
CL=100pF
-90
-100
-120
JEDEC
STANDARD
DESCRIPTION
Min
Max
Min
Max
Min
Max
UNIT
tAVAV
tRC
Read Cycle Time
90
100
120
ns
tELQV
tCE
Chip Enable to Output Delay
90
100
120
ns
tGLQV
tOE
Chip Enable to Output Delay
35
40
50
ns
tEHQZ
tDF
Chip Enable to Output High-Z
30
30
30
ns
tAXQX
tQH
Output Hold Time From Addresses,
/CE or /OE, Whichever Occurs First
0
0
0
ns



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