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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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RJH60D2DPE 데이터시트(PDF) 1 Page - Renesas Technology Corp |
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RJH60D2DPE 데이터시트(HTML) 1 Page - Renesas Technology Corp |
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1 / 4 page  REJ03G1842-0100 Rev.1.00 Oct 14, 2009 Page 1 of 3 Preliminary RJH60D2DPE Silicon N Channel IGBT Application: Inverter REJ03G1842-0100 Rev.1.00 Oct 14, 2009 Features • High breakdown-voltage • Low on-voltage • Built-in diode Outline 1. Gate 2. Collector 3. Emitter 4. Collecotor RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 1 2 3 4 C G E Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to emitter voltage / diode reverse voltage VCES / VR 600 V Gate to emitter voltage VGES ±30 V Tc = 25°C IC 20 A Collector current Tc = 100°C IC 10 A Collector peak current ic(peak) Note1 40 A Collector to emitter diode forward current iDF 10 A Collector to emitter diode forward peak current iD(peak) Note1 40 A Collector dissipation PC Note2 90 W Junction to case thermal impedance θj-c Note2 1.39 °C/ W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25 °C |
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