IXYS Semiconductor GmbH

Edisonstr. 15, D-68623 Lampertheim, Germany

Phone: +49-6206-503-0, Fax: +49-6206-503627

IXYSRF/Directed Energy, Inc.

2401 Research Blvd. Ste 108, Fort Collins, CO 80526

Phone: (970) 493-1901, Fax: 970-493-1903,

www.directedenergy.com

© 2003 IXYSRF/

Fig. 1 Typical forward characteristics

Fig. 2 Typical junction capacity versus

blocking voltage

g

0.10

1.00

10.00

0.00

0.50

1.00

1.50

2.00

Volts

1

10

100

0.1

1

10

100

1000

REVERSEBIASVOLTAGEINVOLTS

0

50

100

150

200

250

300

1.00E-06

1.00E-05

1.00E-04

LEAKAGE CURRENT INAMPERES

0

20

40

60

80

100

120

140

160

1.00E-06

1.00E-05

1.00E-04

1.00E-03

1.00E-02

LEAKAGECURRENTINAMPERES

Fig. 3 Typical leakage current vs. voltage at 25C

Fig. 4 Typical leakage current vs. temperature at 100V

Reverse

Explanatory comparison of the basic operational behavior of rectifier diodes and Gallium Arsenide

Schottky diodes:

Conduction

Forward characteristics

Turn off characteristics

Turn on characteristics

By majority + minority carriers

V

Extraction of excess carriers

causes temperature dependant

reverse recovery (t

Delayed saturation leads to V

FR

Rectifier Diode

By majority carriers only

V

Reverse current charges

junction capacity C

not temperature dependent

No turn on overvoltage peak

GaAs Schottky Diode

GS8DI25104