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CDBQR00340 데이터시트(PDF) 1 Page - Comchip Technology

부품명 CDBQR00340
상세설명  SMD Schottky Barrier Diode
PDF  4 Pages
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제조업체  COMCHIP [Comchip Technology]
홈페이지  http://www.comchiptech.com
Logo COMCHIP - Comchip Technology

CDBQR00340 데이터시트(HTML) 1 Page - Comchip Technology

  CDBQR00340 Datasheet HTML 1Page - Comchip Technology CDBQR00340 Datasheet HTML 2Page - Comchip Technology CDBQR00340 Datasheet HTML 3Page - Comchip Technology CDBQR00340 Datasheet HTML 4Page - Comchip Technology  
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Io = 30 mA
VR = 40 Volts
CDBQR00340
SMD Schottky Barrier Diode
Page 1
REV:A
SMD Diodes Specialist
O
Maximum Rating (at TA=25 C unless otherwise noted)
Typ
VRRM
Repetitive peak reverse voltage
Symbol
Parameter
Conditions
Min
Max Unit
V
45
VR
Reverse voltage
V
40
IFSM
Forward current,surge peak
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method)
500
PD
mW
OC
200
+125
-40
Power Dissipation
Sunction temperature
Tj
OC
+125
Junction temperature
TSTG
mA
IO
Average forward current
mA
30
Symbol
Typ
Parameter
Conditions
Min
Max Unit
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
IR
uA
1.5
Forward voltage
IF = 1 mA DC
VF
V
0.37
0.50
CT
Capacitance between terimnals
pF
F = 1 MHZ and 1 VDC reverse voltage
Reverse current
VR = 30V
VR = 40V
1.00
Features
Extremely thin package.
Low stored charge.
Majority carrier conduction.
Mechanical data
Case: 0402(1005) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any
Weight: 0.001 gram(approx.).
Designed for mounting on small surface.
(RoHS Device)
0.041(1.05)
0.037(0.95)
0.026(0.65)
0.022(0.55)
0402(1005)
Dimensions in inches and (millimeter)
0.020(0.50) Typ.
0.022(0.55)
0.018(0.45)
0.012(0.30) Typ.
Comchip Technology CO., LTD.
QW-A1131


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