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bq20z65-R1DBTR 데이터시트(PDF) 11 Page - Texas Instruments |
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bq20z65-R1DBTR 데이터시트(HTML) 11 Page - Texas Instruments |
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11 / 23 page ![]() 1.76 1.77 1.78 1.79 1.8 1.81 -40 -20 0 20 40 60 80 T -Free-AirTemperature-°C A POWERONRESETBEHAVIOR FREE-AIRTEMPERATURE VS bq20z65-R1 www.ti.com SLUS990 – DECEMBER 2009 POWER-ON RESET Over operating free-air temperature range (unless otherwise noted), TA = –40°C to 85°C, V(REG25) = 2.41 V to 2.59 V, V(BAT) = 14 V, C(REG25) = 1 µF, C(REG33) = 2.2 µF; typical values at TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VIT- Negative-going voltage input 1.7 1.8 1.9 V VHYS Power-on reset hysteresis 5 125 200 mV active low time after power up or watchdog tRST RESET active low time 100 250 560 µs reset DATA FLASH CHARACTERISTICS OVER RECOMMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE Typical values at TA = 25°C and V(REG25) = 2.5 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Data retention 10 Years Flash programming write-cycles 20k Cycles t(ROWPROG) Row programming time See (1) 2 ms t(MASSERASE) Mass-erase time 200 ms t(PAGEERASE) Page-erase time 20 ms I(DDPROG) Flash-write supply current 5 10 mA I(DDERASE) Flash-erase supply current 5 10 mA RAM/REGISTER BACKUP V(RBI) > V(RBI)MIN , VREG25 < VIT–, TA = 85°C 1000 2500 I(RB) RB data-retention input current nA V(RBI) > V(RBI)MIN , VREG25 < VIT–, TA = 25°C 90 220 V(RB) RB data-retention input voltage(1) 1.7 V (1) Specified by design. Not production tested. SMBus TIMING CHARACTERISTICS TA = –40°C to 85°C Typical Values at TA = 25°C and VREG25 = 2.5 V (Unless Otherwise Noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT f(SMB) SMBus operating frequency Slave mode, SMBC 50% duty cycle 10 100 kHz Copyright © 2009, Texas Instruments Incorporated Submit Documentation Feedback 11 Product Folder Link(s): bq20z65-R1 |
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