| 전자부품 데이터시트 검색엔진 |
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APTM120VDA57T3G 데이터시트(PDF) 6 Page - Microsemi Corporation |
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APTM120VDA57T3G 데이터시트(HTML) 6 Page - Microsemi Corporation |
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6 / 7 page ![]() APTM120VDA57T3G www.microsemi.com 6 – 7 Delay Times vs Current td(on) td(off) 0 20 40 60 80 100 120 140 160 180 5 101520253035 ID, Drain Current (A) VDS=800V RG=5Ω TJ=125°C L=100µH Rise and Fall times vs Current tr tf 0 20 40 60 80 5 10 152025 3035 ID, Drain Current (A) VDS=800V RG=5Ω TJ=125°C L=100µH Switching Energy vs Current Eon Eoff 0 0.5 1 1.5 2 2.5 3 5 101520253035 ID, Drain Current (A) VDS=800V RG=5Ω TJ=125°C L=100µH Eon Eoff Eoff 0 1 2 3 4 0 5 10 15 20 25 30 35 Gate Resistance (Ohms) Switching Energy vs Gate Resistance VDS=800V ID=17A TJ=125°C L=100µH Hard switching ZCS ZVS 0 25 50 75 100 125 150 175 200 225 4 6 8 1012 1416 ID, Drain Current (A) Operating Frequency vs Drain Current VDS=800V D=50% RG=5Ω TJ=125°C TC=75°C TJ=25°C TJ=150°C 1 10 100 1000 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) Source to Drain Diode Forward Voltage |
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