CHA2098b

Ref. : DSCHA20981233 21- August-01

1/8

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

20-40GHz High Gain Buffer Amplifier

GaAs Monolithic Microwave IC

Description

The CHA2098b is a high gain broadband three-

stage monolithic buffer amplifier. It is designed

for a wide range of applications, from military to

commercial

communication

systems. The

backside of the chip is both RF and DC grounds.

This helps simplify the assembly process.

The circuit is manufactured with a P-HEMT

process, 0.25µm gate length, via holes through

the substrate, air bridges and electron beam

gate lithography.

It is available in chip form.

Main Features

■ Broadband performances : 20-40GHz

■ 16dBm output power ( 1dB gain comp. )

■ 19dB ±1.5dB gain

■ Low DC power consumption, 150mA @ 3.5V

■ Chip size :

1.67 X 0.97 X 0.10 mm

IN

OUT

Vd1

Vd2,3

Vg1

Vg2

Vg3

Typical on-wafer results :

-25

-15

-5

5

15

25

10

15

20

25

30

35

40

45

Frequency ( GHz )

Main Characteristics

Tamb. = 25°C

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range

20

40

GHz

G

Small signal gain

17

19

dB

P1dB

Output power at 1dB gain compression

13

16

dBm

Id

Bias current

150

200

mA

ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !