MCP1640 datasheet(3/32 Pages) MICROCHIP

3 / 32 page

 2010 Microchip Technology Inc.

DS22234A-page 3

MCP1640/B/C/D

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings †

EN, FB, VIN, VSW, VOUT - GND ...........................+6.5V

EN, FB ........... <greater of VOUT or VIN > (GND - 0.3V)

Output Short Circuit Current....................... Continuous

Output Current Bypass Mode........................... 400 mA

Power Dissipation ............................ Internally Limited

Storage Temperature .........................-65oC to +150oC

Ambient Temp. with Power Applied......-40oC to +85oC

Operating Junction Temperature........-40oC to +125oC

ESD Protection On All Pins:

HBM........................................................ 3 kV

MM........................................................ 300 V

† Notice: Stresses above those listed under “Maximum

Ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation of

the device at those or any other conditions above those

indicated

the

operational

sections

this

specification is not intended. Exposure to maximum

rating conditions for extended periods may affect

device reliability.

DC CHARACTERISTICS

Electrical Characteristics: Unless otherwise indicated, VIN = 1.2V, COUT = CIN = 10 µF, L = 4.7 µH, VOUT =3.3V, IOUT =15 mA,

TA = +25°C.

Boldface specifications apply over the TA range of -40

oC to +85oC.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Input Characteristics

Minimum Start-Up Voltage

VIN

—0.65

0.8

VNote 1

Minimum Input Voltage After

Start-Up

VIN

—0.35

—

Note 1

Output Voltage Adjust Range

VOUT

2.0

5.5

VVOUT  VIN; Note 2

Maximum Output Current

IOUT

100

150

—

1.2V VIN, 2.0V VOUT

150

—

1.5V VIN, 3.3V VOUT

350

—

3.3V VIN, 5.0V VOUT

Feedback Voltage

VFB

1.175

1.21

1.245

V—

Feedback Input Bias Current

IVFB

—10

—

Quiescent Current – PFM

Mode

IQPFM

—

µA

Measured at VOUT = 4.0V;

EN = VIN, IOUT = 0 mA;

Note 3

Quiescent Current – PWM

Mode

IQPWM

—

220

—

µA

Measured at VOUT; EN = VIN

IOUT = 0 mA; Note 3

Quiescent Current – Shutdown

IQSHDN

—0.7

2.3

µA

VOUT = EN = GND;

Includes N-Channel and

P-Channel Switch Leakage

NMOS Switch Leakage

INLK

—0.3

µA

VIN =VSW =5V; VOUT =

5.5V VEN =VFB =GND

PMOS Switch Leakage

IPLK

—

0.05

0.2

µA

VIN =VSW = GND;

VOUT =5.5V

NMOS Switch ON Resistance

RDS(ON)N

—0.6

—



VIN = 3.3V, ISW = 100 mA

PMOS Switch ON Resistance

RDS(ON)P

—0.9

—



VIN = 3.3V, ISW = 100 mA

Note 1:

3.3 K

 resistive load, 3.3V

OUT (1 mA).

For VIN > VOUT, VOUT will not remain in regulation.

IQ is measured from VOUT; VIN quiescent current will vary with boost ratio. VIN quiescent current can be

estimated by: (IQPFM * (VOUT/VIN)), (IQPWM * (VOUT/VIN)).

220

 resistive load, 3.3V

OUT (15 mA).

Peak current limit determined by characterization, not production tested.

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