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CLD160 데이터시트(PDF) 1 Page - Clairex Technologies, Inc

부품명 CLD160
상세설명  Large Active Area Silicon Planar photodiode
PDF  1 Pages
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제조업체  CLAIREX [Clairex Technologies, Inc]
홈페이지  http://www.clairex.com
Logo CLAIREX - Clairex Technologies, Inc

CLD160 데이터시트(HTML) 1 Page - Clairex Technologies, Inc

  CLD160 Datasheet HTML 1Page - Clairex Technologies, Inc  
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Clairex Technologies, Inc.
1301 East Plano Parkway
Plano, Texas 75074-8524
Phone: 972-265-4900
Fax: 972-265-4949
www.clairex.com
CLD160
Large Active Area
Silicon Planar photodiode
0.330 (8.38)
0.320 (8.13)
0.365 (9.27)
0.355 (9.02)
0.164 (4.17)
0.186 (4.72)
0.200 (5.08)
0.030 (0.76) nom
1.000 (25.4) min
CATHODE (long lead)
Case 12
Clairex
Technologies, Inc.
July, 2001
ALL DIMENSIONS ARE IN INCHES (MILLIMETERS)
features
• 100° acceptance angle
• 860nm peak response
• hermetically sealed TO-5
package
• usable for visible through near-IR
• RoHS compliant
description
The CLD160 is a 0.122" x 0.122"
active area silicon photodiode
mounted in a flat window TO-5
package. Wide acceptance angle
permits use in IR air communications
ambient light detection, safety and
monitoring, security systems, etc. For
additional information, call Clairex.
absolute maximum ratings (TA = 25°C unless otherwise stated)
storage temperature....................................................................... -65°C to +150°C
operating temperature................................................................... -65°C to +150°C
lead soldering temperature
(1) ......................................................................... 260°C
reverse voltage ..................................................................................................30V
continuous power dissipation
(2) ...................................................................250mW
notes:
1.
0.06” (1.5mm) from the header for 5 seconds maximum.
2.
Derate linearly 1.60mW/°C free air temperature to TA = +150°C.
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
®
electrical characteristics (TA = 25°C unless otherwise noted)
symbol
parameter
min
typ
max
units
test conditions
ISC
Short-circuit current(3)
-
50
-
µA
VBIAS = 0V, Ee=5mW/cm2
ID
Dark current
-
-
5.0
nA
VR = 15V, Ee = 0
VO
Open circuit voltage
(3)
-
0.35
-
V
Ee = 5mW/cm
2
VBR
Reverse breakdown
25
-
-
V
IR = 100µA
CJ
Junction capacitance
-
-
200
pF
VBIAS=0V, f = 1MHz
tr, tf
Output rise and fall time(4)
-
-
12
µs
RL = 1kΩ
ΘHP
Total angle at half sensitivity points
-
100
-
deg.
notes: 3. Radiation source is a frosted tungsten lamp with color temperature of 2854K or equivalent.
4.
Radiation source is an AlGaAs IRED operating at a peak emission wavelength of 880nm and Ee = 20mW/cm
2.
(short lead)
Revised 3/15/06


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