LSF830C1

Infrared Emitting Diode

2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25℃)

SYMBOL

MIN

TYP

MAX

UNIT

PO

2.5

mW

VF

1.5

2.1

V

IR

100

μ

A

λ

p

830

nm

Δλ

30

nm

θ

±25

deg.

①

Anode

②

Cathode

FEATURES

･

High-output Power

･

Compact

･

High Reliability

APPLICATIONS ･Optical Switches

･

Optical Sensors

1. ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

UNIT

IF

mA

IFP

A

VR

V

PD

mW

Topr

℃

Tstg

℃

Tj

℃

Tls

℃

*2:Time 5 Sec max,Position:Up to 3mm from the body

Peak Wavelength

Spectral Line Half Width

Half Intensity Beam Angle

I T E M

Power Output

Forward Voltage

Reverse Current

IF=20mA

IF=20mA

IF=20mA

CONDITIONS

IF=20mA

IF=20mA

VR=5V

I T E M

Forward Current (DC)

Forward Current (Pulse)*1

Reverse Voltage

Power Dissipation

Operating Temp.

Storage Temp.

Junction Temp.

5

100

-20 TO 85

-30 TO 100

RATINGS

Dimensions (Unit:mm)

60

0.5

100

260

Lead Soldering Temp.*2

*1:Tw=10uS,T=10mS

THERMAL DERATING CURVE

0

10

20

30

40

50

60

70

80

-30

0

30

60

90

AMBIENT TEMPERATURE(℃)

FORWARD I-V CHARACTERISTICS

0

10

20

30

40

50

60

01

23

FORWARD VOLTAGE(V)

SPECTRAL OUTPUT

0

20

40

60

80

100

120

730

830

930

WAVELENGTH(nm)

RADIATION PATTERN

0

20

40

60

80

100

120

-90

-60

-30

0

30

60

90

BEAM ANGLE(deg.)

RELATIVE POWER vs FORWARD CURRENT

0

50

100

150

200

250

0

1020

3040

5060

FORWARD CURRENT(mA)

OPTRANS

2008/6/9

To purchase this part contact

Marktech Optoelectronics at

800.984.5337

Optoelectronics

www.marktechopto.com