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STIEC45-28AS 데이터시트(PDF) 2 Page - STMicroelectronics |
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STIEC45-28AS 데이터시트(HTML) 2 Page - STMicroelectronics |
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2 / 9 page ![]() Characteristics STIEC45-XXAS 2/9 Doc ID 16871 Rev 1 1 Characteristics Figure 1. Electrical characteristics - parameters Table 1. Absolute maximum ratings (Tamb = 25 °C) Symbol Parameter Value Unit IPP Peak pulse current(1) (8/20 µs, 1.2/50 µs) 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Tj initial = Tamb 500 A Tstg Storage temperature range -65 to +150 °C Tj Operating junction temperature range -55 to +150 °C TL Maximum lead temperature for soldering during 10 s. 260 °C Table 2. Thermal resistances Symbol Parameter Value Unit Rth(j-l) Junction to leads 15 °C/W Rth(j-a) Junction to ambient on printed circuit on recommended pad layout 90 °C/W I V IF IRM IR IPP VRM VF VBR VCL Symbol Parameter V = Breakdown voltage I = Leakage current @ V V = Stand-off voltage I = Forward current I = Peak pulse current I = Breakdown current V = Forward voltage drop R BR RM RM RM PP R F V = Clamping voltage CL F d = Dynamic impedance |
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