Rev. 0.1 / November 2008

21

H5PS2G43AFR

H5PS2G83AFR

4. Electrical Characteristics & AC Timing Specification

Refresh Parameters by Device Density

Note:

1: If refresh timing is violated, data corruption may occur and the data must be re-written with valid data before a valid READ can be

executed.

2. This is an optional feature. For detailed information, please refer to “operating temperature condition” in this data sheet.

DDR2 SDRAM speed bins and tRCD, tRP and tRC for corresponding bin

Note:

1. 8 bank device Precharge All Allowance: tRP for a Precharge All command for an 8 Bank device will equal to tRP+1*tCK, where tRP

are the values for a single bank Precharge, which are shown in the table above.

2. Refer to Specific Notes 32.

3. Refer to Specific Notes 3.

Parameter

Symbol

256Mb 512Mb 1Gb

2Gb

4Gb Units Notes

Refresh to Active/Refresh

command time

tRFC

75

105

127.5

195

327.5

ns

1

Average periodic

refresh interval

tREFI

7.8

7.8

7.8

7.8

7.8

us

1

3.9

3.9

3.9

3.9

3.9

us

1,2

Speed

DDR2-800

DDR2-667

Units

Notes

Parameter

min

min

min

min

Bin(CL-tRCD-tRP)

5-5-5

6-6-6

4-4-4

5-5-5

CAS Latency

5645

tCK

tRCD

12.5

15

12

15

ns

2

12.5

15

12

15

ns

2

tRAS

45

45

45

45

ns

2,3

tRC

57.5

60

57

60

ns

2