H5MS5122DFR datasheet(21/62 Pages) HYNIX

21 / 62 page

Rev 1.2 / Jul. 2008

Mobile DDR SDRAM 512Mbit (16M x 32bit)

H5MS5122DFR Series / H5MS5132DFR Series

Mobile DDR OUTPUT SLEW RATE CHARACTERRISTICS

Note:

1. Measured with a test load of 20pF connected to VSSQ

2. Output slew rate for rising edge is measured between VILD(DC) to VIHD(AC) and for falling edge between VIHD(DC) to VILD(AC)

3. The ratio of pull-up slew rate to pull-down slew rate is specified for the same temperature and voltage, over the entire temperature

and voltage range. For a given output, it represents the maximum difference between pull-up and pull-down drivers due to process

variation.

Mobile DDR AC OVERSHOOT / UNDERSHOOT SPECIFICATION

Note:

1. This specification is intended for devices with no clamp protection and is guaranteed by design.

Parameter

Min

Max

Unit

Note

Pull-up and Pull-Down Slew Rate for Full Strength Driver

0.7

2.5

V/ns

1, 2

Pull-up and Pull-Down Slew Rate for Half Strength Driver

0.3

1.0

V/ns

1, 2

Output Slew Rate Matching ratio (Pull-up to Pull-down)

0.7

1.4

Parameter

Specification

Maximum peak amplitude allowed for overshoot

0.5V

Maximum peak amplitude allowed for undershoot

0.5V

The area between overshoot signal and VDD must be less than or equal to

3V-ns

The area between undershoot signal and GND must be less than or equal to

3V-ns

2.5V

2.0V

1.5V

1.0V

0.5V

0.0V

-0.5V

Overshoot

Undershoot

VDD

VSS

Max. Amplitude = 0.5V

Max. Area = 3V-ns

Time (ns)

H5MS5122DFR 데이터시트(PDF) 21 Page - Hynix Semiconductor

H5MS5122DFR 데이터시트(HTML) 21 Page - Hynix Semiconductor

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62

데이터시트 다운로드

링크 URL